Scia Systems - PEVCD/RIE Systems - scia Batch 350

Technical Data
Carrier size	2 carriers with maximum size of 350 mm x 240 mm
Substrate holder	Water cooled, pulsed DC bias
Plasma source	RF parallel plate arrangement, 13.56 MHz
Max. RF power	2 x 600 W
Electrode setup	Temperature: Heating up to 400°C
	Distance: Adjustable between 50 mm and 150 mm
Operation modes	Independent or coupled electrodes
Typical deposition rate	SiC: 5 nm/min
Base Pressure	< 5 x 10-7 mbar
System dimensions (W x D x H)	0.90 m x 1.70 m x 2.30 m (without electrical rack and pumps)
Tool configuration	1 process chamber with manual loading
Software interface	SECS II / GEM

Technical Data

Carrier size

2 carriers with maximum size of 350 mm x 240 mm

Substrate holder

Water cooled, pulsed DC bias

Plasma source

RF parallel plate arrangement, 13.56 MHz

Max. RF power

2 x 600 W

Electrode setup

Temperature: Heating up to 400°C

Distance: Adjustable between 50 mm and 150 mm

Operation modes

Independent or coupled electrodes

Typical deposition rate

SiC: 5 nm/min

Base Pressure

< 5 x 10-7 mbar

System dimensions (W x D x H)

0.90 m x 1.70 m x 2.30 m (without electrical rack and pumps)

Tool configuration

1 process chamber with manual loading

Software interface

SECS II / GEM

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