Scia Systems - Ion Beam Trimming - scia Trim 200

Technical Data
Substrate diameter	Up to 200 mm
Substrate Holder	Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 170° in 0.1° steps
Ion Beam Source	Circular RF ion beam source RF350‑e
Neutralizer	Plasma bridge neutralizer N‑RF
Typical removal rates	SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min
Uniformity variation	≤ 2.0 %
Base pressure	< 1 x 10-6 mbar
System dimensions (W x D x H)	2.70 m x 1.50 m x 2.40 m (without electrical rack and pumps)
Tool configurations	Single wafer load-lock, Cluster system with cassette handling
Software interfaces	SECS II / GEM

Technical Data

Substrate diameter

Up to 200 mm

Substrate Holder

Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 170° in 0.1° steps

Ion Beam Source

Circular RF ion beam source RF350‑e

Neutralizer

Plasma bridge neutralizer N‑RF

Typical removal rates

SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min

Uniformity variation

≤ 2.0 %

Base pressure

< 1 x 10-6 mbar

System dimensions (W x D x H)

2.70 m x 1.50 m x 2.40 m (without electrical rack and pumps)

Tool configurations

Single wafer load-lock, Cluster system with cassette handling

Software interfaces

SECS II / GEM

Scia Systems - Ion Beam Deposition Systems - scia Coat 200 & scia Coat 500